Power & RF Electronics
MBE is used for growing high-purity, epitaxial GaN and AlGaN/GaN heterostructures for High Electron Mobility Transistors (HEMTs). It provides the atomic-layer precision needed for the sharp interfaces that define device performance.
UHV Sputtering & Thin Film Deposition is used for depositing high-quality dielectric passivation layers, metallic contacts/electrodes, and potentially for III-V on Si integration schemes to leverage silicon foundries.
Typical applications are:
- 5G infrastructure:
- base stations
- RF transceivers
- defense:
- radar
- battlefield communications
- power transistors/amplifiers
- data communications
RF transceivers and high-frequency components grown with Molecular Beam Epitaxy (MBE) technology leverage the technique’s ability to create ultra-pure, atomic-layer-precise epitaxial films for high-performance compound semiconductors, such as AlGaN/GaN HEMTs and GaAs-based devices. MBE is specifically used to fabricate high-electron-mobility transistors (HEMTs) and power amplifiers for 5G, offering superior material quality for microwave and millimeter-wave operations. At DCA we are committed to exactly fullfil these needs.
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