P-Series
MBE for III-V Research
- Designed for high-quality III-V epitaxy with large area cryopanels to maximise pumping.
- 10/12 source ports for effusion cells and crackers.
- LN2-cooled separator plates prevent thermal crosstalk between sources and limits heat load to the sample.
- Vertical shutters limit source contamination from flakes.
The P-Series is specifically designed for high-quality III-V molecular beam epitaxy, long growth campaigns, and easy servicing.
The UHV chamber is divided in two parts, each with a separate cryopanel to maximise the LN2-cooled surface area that provides effective pumping of group-V materials, which is critical for high-carrier mobility applications. The two-part design also allows the cryopanels to be easily exchanged or cleaned during the maintenance period.
Linear shutters are mounted vertically to allow group-III materials (Ga/In) to collect into dedicated wells in the source flange for easier cleaning. Another key benefit is that the ability to remove and clean individual source shutters from the mounting flange (i.e. it is not necessary to fully open the chamber).
For Nitrides (III-N), an RF plasma source is available and may be mounted to an available source port. Additionally, for nitride growth with an ammonia source, the chamber, sources, manipulator, and components must be specially configured to ensure safe and reliable operation. This includes monitoring the cryopanel temperature for controlled warming to ensure a safe pressure level is maintained.
The P-Series chamber follows DCA’s modular design structure and is compatible with either a manual (linear buffer chamber) or automated (central distribution chamber) wafer transfer system.
Example systems:
- University of Sheffield (UK) – III-V with automated transfer system.
- SITP (China) – III-V system with manual transfer system.
