Substrate Manipulator

Substrate Manipulator

Key features 

  • UHV compatible – bakeable to 200°C. 
  • Reliable manipulation of samples from flag-style/5×5 mm
    up to 4”.
     
  • Excellent thermal uniformity.  
  • Robust motorised motion (rotation and linear). 
  • Additional features available: RF/DC bias, sample cooling, tilt stage. 

Substrate manipulators (a.k.a. substrate heaters / deposition stages) form a critical part of any UHV process system.  

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Robust and reliable performance

Robust and reliable performance is essential for long growth campaigns and optimal efficiency of the system. DCA manipulators are equipped with; 

  • A magnetically coupled direct rotary drive for true UHV operation. 
  • Water-cooled thermal contacts.  
  • Shielding to protect internal wiring.  
  • Coated bearings to guarantee smooth motion and long-lasting performance. 

Excellent thermal uniformity of the wafer is equally important for high quality material growth.  

Each heating element is carefully designed for the specified wafer size. The following heater elements are available: 

  • Silicon carbide (SiC). 
  • Pyrolytic-graphite encased in pyrolytic. boron nitride (PBN-PG). 
  • Titanium.  
  • Graphite. 
  • Laser heater. 

The wafer size/distribution determines whether a single- or a dual-zone heater element provides optimal thermal uniformity. Both SiC and PBN-PG materials offer excellent thermal stability and temperature uniformity across the wafer.
Contact us for advice on which heater element is most suitable for your process.  

The manipulator stage for transferring and supporting the wafer/carrier is dependent on the method of transfer:  

  • For automated transfer systems – a fork design allows simple and quick transfer between the robot end effector and the process chamber.  
  • For manual transfer systems – a bayonet design provides secure transfer to/from the linear transfer arm.  

Specifications

FeatureSpecifications
Single-sample carriersFlag-style, 5x5mm, 10×10, 1”, 2”, 3”, 4”, custom
Mounting flangeDN150CF
Heater element

Silcon Carbide (SiC)

Pyrolytic boron nitride-coated pyrolytic graphite (PBN-PG)

Graphite

Tungsten wire

Laser heater

Thermal uniformity± 2°C (excl. 5 mm edge)
Z-motion

50 mm (standard)

Custom available

Continuous rotation0.1 – 60  rpm
Power connectionEMO (single or dual)
ThermocoupleS-type / C-type
Water-cooling6 mm, Swagelok connection
Max. temperature

900°C (@ 5E-5 Torr)

1000°C (UHV @ Si Surface)

1150°C (UHV @ TC)

Optional add-on features

RF/DC bias

Water/Liquid nitrogen cooling of stage

X/Y motion

Sample tilt

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