M-Series

MBE for Metals & Oxide Research

Key features

Designed for metal/metal-oxide MBE on 4″ wafers.
Provides excellent flexibility with ports configured for multiple source types (crackers, effusion cells, e-beam, RF plasma, gas injectors).
Suitable for Hybrid-MBE applications with metal-organic precursors.

The M-Series is a versatile MBE system for metal/oxide epitaxy. The chamber design allows use of both effusion cells and e-beam sources for material evaporation. For oxide epitaxy, several oxygen sources are available, including molecular oxygen, atomic oxygen, and ozone (e.g. DCA’s Ozone Delivery System).

The M-Series chamber is available with various source configurations:

M450
- 1 x E-beam source (CF200), 6 x Effusion cells (CF100)
M600
- 1 x E-beam source (CF200), 10 x Effusion cells (CF100)
- 2 x E-beam source (CF200), 8 x Effusion cells (CF100)
- 3 x E-beam source (CF200), 6 x Effusion cells (CF100)
- 4 x E-beam source (CF200), 4 x Effusion cells (CF100)

The M-Series chamber follows DCA’s modular design structure that facilitates integration with either a manual (linear buffer chamber) or automated (central distribution chamber) wafer transfer system.

An oxygen compatible high temperature substrate manipulator allows substrate temperatures up to 1000°C (1200°C thermocouple).

The M-Series is compatible with Hybrid-MBE applications that make use of metal-organic precursors to deposit low vapour pressure metals (e.g. Titanium) at lower temperatures. See related products below for more information on the MOPI source.

Special features

The M-Series E-beam module allows material refilling and/or crucible exchange without venting the main growth chamber.
Gate valved (retractable) effusion cell allow material refilling and/or crucible exchange without venting the main growth chamber.
A differentially pumped module may be added to protect components when processing under higher partial pressures (e.g. RGA and RHEED).