Photonics & Optoelectronics
Advanced photonic and optoelectronic technologies rely on ultra‑pure, precisely engineered thin films. UHV deposition systems enable atomic‑level control of interfaces, composition, and crystallinity—critical for high‑performance optical and electronic devices. Below are key application areas where UHV processing is essential.
Applications:
III‑V Semiconductor Lasers & Emitters
High‑efficiency laser diodes for optical communication, sensing, and illumination.
- Quantum wells and superlattices
- Quantum dot and quantum dash active regions
- Distributed Bragg reflector (DBR) mirror stacks
- Strain‑engineered heterostructures
Photonic Integrated Circuits (PIC)
Optical waveguides, modulators, and active components for on‑chip light management.
- High‑index‑contrast waveguide multilayers
- Low‑loss dielectric stacks for routing and confinement
- Epitaxial III‑V‑on‑Si active regions (UHV‑bonded / UHV‑grown)
- Ferroelectric BTO (BaTiO₃) thin‑film structures for ultrahigh electro‑optic modulation
- Hybrid BTO–Si and BTO–SiN integration for high‑speed PIC platforms
Advanced Photovoltaic Structures
Multilayer architectures designed for high‑efficiency light absorption and charge transport.
- Multijunction epitaxial solar cell stacks
- Graded buffer layers for lattice matching
- Ultra‑thin tunneling junctions
- Nanoscale passivation and transport layers
A fully processed 200mm wafer (BTO on silicon photonics, wafer-level monolithically integrated) with a zoom into one reticle, and a die shot of a C-band dual-polarization IQ modulator for up to 130GBd DP-16QAM modulation integrated in a 4×6 mm2 die.
Data Courtesy of Lumiphase AG, Switzerland
Related Products:
MBE is the primary tool for advanced photonics R&D and production. It is essential for:
- Lasers: MBE is used for growing complex quantum cascade laser (QCL) and VCSEL structures requiring ultra-precise layer thickness and composition.
- IR Detectors: MBE grwon epiaxial wafers are the “only technology giving the necessary precision” for high-acuity MCT detectors. MBE is also used for QWIPs and antimonide structures.
- MicroLEDs: it enables the incorporation of high indium (In) fractions in GaN to cover the full visible spectrum without phosphorous.
(UHV) Sputtering is crucial for device passivation (protecting laser facets, LED surfaces), depositing dielectric mirrors for VCSELs, and creating transparent conductive oxides (e.g., for displays).
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