Infrared (IR) Detection & Imaging
MBE‑Grown Infrared Detection & Imaging Molecular Beam Epitaxy (MBE) is one of the most important thin‑film deposition technologies for high‑performance infrared detectors, especially in the mid‑wave (MWIR) and long‑wave (LWIR) infrared ranges. MBE enables atomic‑scale control of composition, interfaces, and doping – critical for producing low‑defect, high‑sensitivity IR detector materials.
Automotive LiDAR increasingly requires high‑sensitivity infrared detectors to achieve long range, high resolution, and robust performance in adverse weather. While many commercial LiDARs still rely on Si or InGaAs photodiodes, MBE‑grown IR semiconductor materials (such as GaSb‑based antimonides, HgCdTe, and emerging mid‑IR materials) are becoming strategically important for next‑generation automotive LiDAR systems.
Applications:
- Night vision, tracking
- HgCdTe (MCT) – The dominant IR detector material.
- HgCdTe remains the benchmark semiconductor for high‑performance IR imaging due to its tunable bandgap and high quantum efficiency.
- Type 2 Super Lattice IR detectors (InAs / GaSb based).
- Safety.
- Automotive LiDAR (long‑range, low‑noise IR detection).
- Gas sensing.
- Medical imaging.
Key Materials: Mercury Cadmium Telluride (MCT), AlGaAs Quantum Well Infrared Photodetectors (QWIPs), Antimonides (InAs, GaSb).
Related Products:
Publications / Results:
- Microstructure and Optical Characterization of Mid-Wave HgCdTe Grown by MBE under Different Conditions
- Mid- and long-infrared emission properties of Inx Ga1-xAsySb1-y quaternary alloy with Type-II InAs/GaSb superlattice distribution
- Fabrication and Characterization of an InAs(Sb)/InxGa1-xAsySb1-y Type-II Superlattice
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