12″ (300mm) Barium Titanate (BTO)

Barium Titanate (BTO) on 12" (300 mm) Silicon. Proven performance for next-generation photonics.

Production oxide MBE from DCA Instruments makes BTO-on-silicon photonics manufacturable – FOUP-to-FOUP automation, consistent results wafer after wafer, and high-quality epitaxial BTO on a proven, reliable platform.

Key messages:

Key features:

  • 24/7 batch processing, ultra-low-particle, SEMI-FAB-compliant
  • Automated FOUP loading, wafer ID recognition and flipping
  • UHV transfer and wafer tracking by the CDC robot
  • 8″ (200mm) or 12″ (300mm) wafer size
  • Surface prep and MBE growth with closed-loop feedback, with real-time flux and growth manipulation using integrated RHEED and XBS
  • MOSAIC Software

Why BTO? A strong Pockels material made for silicon

  • Fully CMOS compatible: epitaxial BTO on Si via an MBE-grown SrTiO<sub>3</sub> seed; integration steps commonly available in CMOS back-end-of-line processing; monolithically integrated in a 300 mm SiPh foundry process with 95 % functional yield. [Abel, Nat. Mater. 2019; PsiQuantum, Nature 2025]
  • High Pockels effect (~923 pm/V, one of the largest on silicon) → smaller modulators, denser arrays: 1.75 mm phase shifters reach 105 GHz; four modulators on a 5.1 × 3.5 mm² die; 350 µm phase shifters for a full π shift in a 116-actuator mesh. [OFC 2026; Nat. Photon. 2026]
  • Field-driven, low power: no carrier injection; bias held at < 5 mW vs 13 mW per thermal phase shift; 560 nW per π static power, no thermal crosstalk. [OFC 2026; Nat. Photon. 2026]

BTO beyond datacom

The enabling step: an MBE-grown SrTiO3 (STO) template layer

  • Without an MBE-grown SrTiO3 seed layer, high-quality epitaxial BTO films on silicon cannot be achieved.
  • The few-atomic-layer seed locks into registry with silicon and templates single-crystal BTO; sputtered and hybrid-MBE BTO also build on it.
Automated: a fab tool, not a lab tool:
  • In 2019 DCA built the world’s first production oxide MBE for 300 mm wafers.
  • Wafers go in and come out in FOUPs. The EFEM has dual FOUP ports, the load lock and storage hold 10 or 25 wafers, and a robot moves wafers under ultra-high vacuum.
  • Software runs the whole process: wafer ID and tracking, growth recipes with closed-loop feedback, safety interlocks, 24/7 batch processing and SECS/GEM connection to the factory system.
  • Production proven Automated Transfer Robot validated for over 25,000 transfer cycles, delivers long-term operational robustness and repeatability. 
  • Wafer temperature uniformity of ±2.0 °C at 600 °C for precise, repeatable BTO growth.
Every BTO route on one flexible, fully automated DCA platform

Delivering output

  • 100 BTO wafers on 300 mm, with 3σ variation:
    • lattice parameter about 0.1 %
    • thickness under 1 %
    • refractive index typically under 0.2 %
  • Uniform centre to edge: lattice within ±0.2 %, refractive index within ±0.4 % across the 300 mm wafer.
  • 12″ wafers double device throughput vs 8″.
  • Visuals: 3σ graphs; “Lattice parameter_300mm_DCA” and “Refractive index_300mm_DCA”; 300 mm BTO wafer photo.

Proven results

  • OFC 2026 (McGill, Ciena, Lumiphase): net 1.6 Tb/s (4 × 448 Gb/s PAM4, 2 km), 105 GHz, consistent 20–85 °C, on epitaxial BTO grown on DCA metal-oxide MBE systems; companion DP-IQ modulator: net 1 Tb/s per wavelength [Link].

Trusted by Industry Leaders:

  • Lumiphase (Switzerland) – Device maker: manufactures BTO-enhanced SiPh PICs based on proprietary technology to deliver leading-edge integration, efficiency and scalability to customers worldwide. MBE-grown BTO in 200 and 300 mm SiPh flows.
  • PsiQuantum (USA) – Photonic quantum computing: manufactures photonic components, including single photon sources, single-photon detectors, and an ultra-high-performance optical switches for photonic quantum computing. Photonic quantum computing, 300 mm foundry flow.
  • La Luce Cristallina (USA) – Manufacturer of STO/BTO wafers: manufactures epitaxial BTO and STO wafer platforms integrated with silicon and silicon-on-insulator (SOI). Available across multiple wafer sizes, orientations, and material thicknesses, supporting the development of next-generation photonic, sensing, quantum, and semiconductor devices.

Three business models, one enabling step: precision epitaxy on production-grade DCA tools.

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