M-Series
MBE Production System
Key System Features
- Process silicon wafers up to 12″ / 300 mm
- Fully automated UHV wafer transfer system
- Compatible with Tier 1 Foundry specification for particle counts and trace metal contamination
- Excellent growth uniformity, BTO on Si 300 mm (+/- 2%)
Demand for production MBE is rapidly increasing. Greater control over the materials’ tuneability and overall quality is essential for future photonic applications. DCA’s proven production technology is enabling industries to break records and overcome technological barriers that have previously inhibited progress.
The M-Series Production MBE is designed for metal/metal-oxide growth on silicon wafers up to 300 mm (12”). Source ports are available for e-beams, effusion cells, crackers, RF plasma and/or ion source.
System Overview
- M-Series MBE growth chamber:
- M800 – up to 6” /150 mm wafer
- M1000 – up to 12” / 300 mm wafer
- Central distribution chamber (CDC) with wafer handling robot
- Cassette load lock chamber – 10- or 25-wafer slot capacity
- Preparation chamber – suitable for high-temperature processing or ion/plasma cleaning
- Storage chamber – for mask/sample storage (optional)
- High uniformity UHV sputter / metallization chamber (optional)
Fast material loading for effusion cells and e-beams is available to extend growth campaigns and limit downtime – see related products below.
Contact us to discuss your system and process requirements in more detail.
Record-breaking Pockels coefficient – BTO on 300 mm Si 1500 pm/V
Total particle count measured over 300 mm/12″ Si wafer:
25 – after transfer to chambers.
91 – after heating to 800 °C with rotation.