Dual MBE System with LBC and ARPES Analysis
2244 – University of St Andrews – UK
Customers Website: King Research Group – University of St Andrews
- R450 Oxide MBE system
- V450 MBE System
- Linear Buffer Chamber
- ARPES (SPECS)
Key features:
- Designed for metal/metal-oxide MBE on 2″ wafers.
- Includes an in-situ analysis system (Angle Resolved Photon Electron Spectroscopy (ARPES)) to investigate the band-structure of the new materials.
- Provides excellent flexibility with ports configured for multiple source types (crackers, effusion cells, e-beam, RF plasma, gas injectors).
Applications:
The group at St.Andrews investigates the electronic structure and many-body interactions of 2D and quantum materials, and create new designer materials by atomic layer-by-layer growth.
Category:
- R&D
Video of Sample Transfer(s):
Sample transfer video with DCAs Linear Buffer Chamber.
Timelapse of the system installation at Uni of St. Andrews.
Uni of St. Andrews Wafer to FLAG Type Sample Loading video.
Uni of St. Andrews FLAG Type Sample Handling Video.
Publications/Results:
PHYSICAL REVIEW X 15, 041028 (2025): Persistence of Charge Ordering Instability to Coulomb Engineering in the Excitonic Insulator Candidate TiSe2
PHYSICAL REVIEW B 112, 245416 (2025): Electronic structure of monolayer CrTe2: An antiferromagnetic two-dimensional van der Waals material in the Excitonic Insulator Candidate TiSe2
APL Mater. 13, 081123 (2025): Substrate pre-sputtering for layer-by-layer van der Waals epitaxy of 2D materials
Adv. Mater. 2024, 36, 2402254: Epitaxial Growth of Large-Area Monolayers and van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation
npj Quantum Materials | (2025) 10:50: From ferromagnetic semiconductor to antiferromagnetic metal in epitaxial CrxTey monolayers
J. Appl. Phys. 135, 045303 (2024): Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy
Nano Lett. 2024, 24, 215–221: Controlling the Charge Density Wave Transition in Single-Layer TiTe2xSe2(1-x) Alloys by Band Gap Engineering
npj Quantum Materials (2022) 7:98: Orbital-selective band hybridisation at the charge density wave transition in monolayer TiTe2
2D Mater. 8 (2020) 015004: Strong-coupling charge density wave in monolayer TiSe2
PHYSICAL REVIEW MATERIALS 4, 014003 (2020): Morphology control of epitaxial monolayer transition metal dichalcogenides
PHYSICAL REVIEW B 101, 035404 (2020): Proximity-induced ferromagnetism and chemical reactivity in few-layer VSe2 heterostructures
Nano Lett. 2018, 18, 4493–4499: Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2
Adv. Mater. 2026, 38, e11262: Resonant Interlayer Coupling in NbSe2-Graphite Epitaxial Moiré Superlattices
